| PART |
Description |
Maker |
| V802ME03 |
LOW COST - HIG PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
|
ZCOMM[Z-Communications, Inc]
|
| LG50N10 |
High density cell design for ultra low Rdson
|
Shenzhen Luguang Electr...
|
| 2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
| SPI47N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, NL
|
Infineon
|
| NCP752 NCP752ASN18T1G NCP752ASN33T1G NCP752ASN30T1 |
200 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, Low Dropout Regulator
|
ON Semiconductor
|
| IPP14N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 13.9mOhm, 30A, LL
|
Infineon
|
|
